Fabrication and optical properties of MgxZn1-xO thin films

MgxZn1-xO (x≤0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is...

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Published inChinese physics B Vol. 19; no. 1; pp. 524 - 526
Main Authors Xi-Jian, Zhang, Hui-Min, Yuan, Qing-Pu, Wang, Tong, Wang, Hong-Lei, Ma
Format Journal Article
LanguageEnglish
Published IOP Publishing 2010
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Summary:MgxZn1-xO (x≤0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1-xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x = 0 to 3,90 eV at x = 0.30.
Bibliography:O484.1
O734
11-5639/O4
semiconductor, thin films, alloys, optical DroDerties
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/1/018102