Fabrication and optical properties of MgxZn1-xO thin films
MgxZn1-xO (x≤0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is...
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Published in | Chinese physics B Vol. 19; no. 1; pp. 524 - 526 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
2010
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Subjects | |
Online Access | Get full text |
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Summary: | MgxZn1-xO (x≤0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1-xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x = 0 to 3,90 eV at x = 0.30. |
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Bibliography: | O484.1 O734 11-5639/O4 semiconductor, thin films, alloys, optical DroDerties ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/19/1/018102 |