Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers
The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances,...
Saved in:
| Published in | Applied physics. A, Materials science & processing Vol. 116; no. 4; pp. 1757 - 1760 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
2014
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances, and internal quantum efficiency (IQE) are investigated. Simulation results show that the light output power and IQE are both largely improved over the conventional LED structure due to the improvement in hole injection efficiency and electron blocking capability, especially for the LED with composition-graded InGaN interlayer. |
|---|---|
| AbstractList | The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances, and internal quantum efficiency (IQE) are investigated. Simulation results show that the light output power and IQE are both largely improved over the conventional LED structure due to the improvement in hole injection efficiency and electron blocking capability, especially for the LED with composition-graded InGaN interlayer. |
| Author | Yang, Yu-Jue Zeng, Yi-Ping |
| Author_xml | – sequence: 1 givenname: Yu-Jue surname: Yang fullname: Yang, Yu-Jue organization: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS – sequence: 2 givenname: Yi-Ping surname: Zeng fullname: Zeng, Yi-Ping email: ypzeng@red.semi.ac.cn organization: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS |
| BookMark | eNp9kM9KAzEQxoNUsFYfwFteIJp_m2yOUmotFL3oOaTZ7Dalm5QkIn17U7Zn5zLMfPN9DL97MAsxOACeCH4mGMuXjDFjCmHCUcsoQfIGzAlnFGHB8AzMseKyKkrcgfucD7gWp3QOhlXYm2BdB08u9TGNlwHGHm7C2nzAox_2BbnRl-LDADsfO5fhry_764EJHbRxPMXsi48BDcl0NWwSfSguHc3ZpfwAbntzzO7x2hfg-231tXxH28_1Zvm6RZY1bUF816qm5Z3iRhrZWy6oFWLXKEoaw4RrncNEGGGJ6HnDWqOYM7KR1nR8V5dsAciUa1PMOblen5IfTTprgvWFlJ5I6UpKX0hpWT108uR6GwaX9CH-pFDf_Mf0B-C0bjo |
| CitedBy_id | crossref_primary_10_7567_JJAP_54_042102 crossref_primary_10_1016_j_jcrysgro_2016_11_059 crossref_primary_10_1002_pssa_201532597 |
| Cites_doi | 10.1063/1.2963029 10.1063/1.3571440 10.1063/1.3012388 10.1063/1.3244203 10.1063/1.2988324 10.1063/1.3678197 10.1063/1.3153508 10.1109/LPT.2009.2021155 10.1063/1.1600519 10.1038/nphoton.2009.32 10.1063/1.2805197 10.1364/OL.35.003285 10.1002/lpor.200710019 10.1126/science.1108712 |
| ContentType | Journal Article |
| Copyright | Springer-Verlag Berlin Heidelberg 2014 |
| Copyright_xml | – notice: Springer-Verlag Berlin Heidelberg 2014 |
| DBID | AAYXX CITATION |
| DOI | 10.1007/s00339-014-8321-7 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1432-0630 |
| EndPage | 1760 |
| ExternalDocumentID | 10_1007_s00339_014_8321_7 |
| GroupedDBID | -54 -5F -5G -BR -EM -XW -XX -Y2 -~C -~X .86 .VR 06D 0R~ 0VY 199 1N0 1SB 2.D 203 23M 28- 29~ 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 4.4 406 408 409 40D 40E 5QI 5VS 67Z 6NX 78A 8UJ 95- 95. 95~ 96X AAAVM AABHQ AABYN AAFGU AAHNG AAIAL AAJKR AANZL AARHV AARTL AATNV AATVU AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABBBX ABBXA ABDBF ABDZT ABECU ABFGW ABFTV ABHLI ABHQN ABJNI ABJOX ABKAS ABKCH ABKTR ABLJU ABMNI ABMQK ABNWP ABPTK ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACTTH ACVWB ACWMK ADHHG ADHIR ADIMF ADINQ ADJSZ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEEQQ AEFIE AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AEYGD AFEXP AFGCZ AFGFF AFLOW AFNRJ AFQWF AFWTZ AFZKB AGAYW AGDGC AGGBP AGGDS AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AI. AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN B-. B0M BA0 BBWZM BDATZ BGNMA CAG COF CS3 CSCUP DDRTE DL5 DNIVK DPUIP EAD EAP EAS EBLON EBS EIOEI EJD EMK EPL ESBYG EST ESX F5P FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GPTSA GQ6 GQ7 GQ8 GXS HF~ HG5 HG6 HMJXF HQYDN HRMNR HVGLF HZ~ H~9 I-F I09 IHE IJ- IKXTQ ITM IWAJR IXC IZIGR IZQ I~X I~Z J-C J0Z JBSCW JCJTX JZLTJ KDC KOV KOW LAS LLZTM M4Y MA- MK~ N2Q N9A NB0 NDZJH NPVJJ NQJWS NU0 O9- O93 O9G O9I O9J OAM P19 P2P P9T PF0 PT4 PT5 QOK QOS R89 R9I RHV RIG RNI RNS ROL RPX RSV RZK S16 S1Z S26 S27 S28 S3B SAP SCLPG SDH SGB SHUTK SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPH SPISZ SRMVM SSLCW STPWE SZN T13 T16 TSG TSK TSV TUC TUS U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW VH1 VOH W23 W48 W4F WH7 WIP WJK WK8 YLTOR Z45 Z5O Z7R Z7S Z7U Z7V Z7W Z7X Z7Y Z7Z Z83 Z85 Z86 Z88 Z8M Z8N Z8P Z8Q Z8R Z8S Z8T Z8W Z8Z Z92 ZE2 ZMTXR ~8M ~EX AACDK AAEOY AAJBT AASML AAYXX ABAKF ACAOD ACDTI ACZOJ AEFQL AEMSY AGQEE AGRTI AIGIU CITATION H13 |
| ID | FETCH-LOGICAL-c358t-4b89584d94a7a7fc462c66b59215a36e8ee016a6c16f4538a93ea757cad4bc163 |
| IEDL.DBID | AGYKE |
| ISSN | 0947-8396 |
| IngestDate | Thu Sep 12 19:01:01 EDT 2024 Sat Dec 16 12:02:09 EST 2023 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 4 |
| Keywords | Barrier Height Energy Band Diagram Internal Quantum Efficiency Potential Barrier Height Electron Blocking Layer |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c358t-4b89584d94a7a7fc462c66b59215a36e8ee016a6c16f4538a93ea757cad4bc163 |
| PageCount | 4 |
| ParticipantIDs | crossref_primary_10_1007_s00339_014_8321_7 springer_journals_10_1007_s00339_014_8321_7 |
| PublicationCentury | 2000 |
| PublicationDate | 9-2014 |
| PublicationDateYYYYMMDD | 2014-01-01 |
| PublicationDate_xml | – year: 2014 text: 9-2014 |
| PublicationDecade | 2010 |
| PublicationPlace | Berlin/Heidelberg |
| PublicationPlace_xml | – name: Berlin/Heidelberg |
| PublicationSubtitle | Materials Science & Processing |
| PublicationTitle | Applied physics. A, Materials science & processing |
| PublicationTitleAbbrev | Appl. Phys. A |
| PublicationYear | 2014 |
| Publisher | Springer Berlin Heidelberg |
| Publisher_xml | – name: Springer Berlin Heidelberg |
| References | LiYLHuangYRLaiYHAppl. Phys. Lett.2007911811132007ApPhL..91r1113L PhillipsJMColtrinMECrawfordMHFischerAJKramesMRMueller-MachRMuellerGOOhnoYRohwerLESSimmonsJATsaoJYLaser Photon. Rev.20071307 YangWLiDLiuNChenZWangLLiuLLiLWanCChenWHuXDuWAppl. Phys. Lett.20121000311052012ApPhL.100c1105Y CharashRMaaskantPPLewisLMcAleeseCKappersMJHumphreysCJCorbettBAppl. Phys. Lett.2009951511032009ApPhL..95o1103C SchubertMFXuJKimJKSchubertEFKimMHYoonSLeeSMSoneCSakongTParkYAppl. Phys. Lett.2008930411022008ApPhL..93d1102S FuY-KJiangR-HLuY-HChenB-CXuanRFangY-HLinC-FSuY-KChenJ-FAppl. Phys. Lett.2011981211152011ApPhL..98l1115F KuoY-KChangJ-YTsaiM-COpt. Lett.20103532852010OptL...35.3285K SchubertEFKimJKScience200530812742005Sci...308.1274S YenSHTsaiMCTsaiMLShenYJHsuTCKuoYKIEEE Photon. Technol. Lett.2009219752009IPTL...21..975Y NiXFanQShimadaRÖzgürÜMorkoçbHAppl. Phys. Lett.2008931711132008ApPhL..93q1113N PimputkarSSpeckJDenBaarsSPNakamuraSNat. Photonics200931802009NaPho...3..180P XieJNiXFanQShimadaROzgurUMorkocHAppl. Phys. Lett.2008931211072008ApPhL..93l1107X HanSHLeeDYLeeSJChoCYKwonMKLeeSPNohDYKimDJKimYCParkSJAppl. Phys. Lett.2009942311232009ApPhL..94w1123H VurgaftmanIMeyerJRJ. Appl. Phys.20039436752003JAP....94.3675V S Pimputkar (8321_CR1) 2009; 3 YL Li (8321_CR11) 2007; 91 J Xie (8321_CR5) 2008; 93 W Yang (8321_CR12) 2012; 100 I Vurgaftman (8321_CR14) 2003; 94 SH Yen (8321_CR6) 2009; 21 Y-K Kuo (8321_CR13) 2010; 35 JM Phillips (8321_CR2) 2007; 1 Y-K Fu (8321_CR9) 2011; 98 EF Schubert (8321_CR3) 2005; 308 MF Schubert (8321_CR8) 2008; 93 R Charash (8321_CR4) 2009; 95 SH Han (8321_CR7) 2009; 94 X Ni (8321_CR10) 2008; 93 |
| References_xml | – volume: 93 start-page: 041102 year: 2008 ident: 8321_CR8 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2963029 contributor: fullname: MF Schubert – volume: 98 start-page: 121115 year: 2011 ident: 8321_CR9 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3571440 contributor: fullname: Y-K Fu – volume: 93 start-page: 171113 year: 2008 ident: 8321_CR10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3012388 contributor: fullname: X Ni – volume: 95 start-page: 151103 year: 2009 ident: 8321_CR4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3244203 contributor: fullname: R Charash – volume: 93 start-page: 121107 year: 2008 ident: 8321_CR5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2988324 contributor: fullname: J Xie – volume: 100 start-page: 031105 year: 2012 ident: 8321_CR12 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3678197 contributor: fullname: W Yang – volume: 94 start-page: 231123 year: 2009 ident: 8321_CR7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3153508 contributor: fullname: SH Han – volume: 21 start-page: 975 year: 2009 ident: 8321_CR6 publication-title: IEEE Photon. Technol. Lett. doi: 10.1109/LPT.2009.2021155 contributor: fullname: SH Yen – volume: 94 start-page: 3675 year: 2003 ident: 8321_CR14 publication-title: J. Appl. Phys. doi: 10.1063/1.1600519 contributor: fullname: I Vurgaftman – volume: 3 start-page: 180 year: 2009 ident: 8321_CR1 publication-title: Nat. Photonics doi: 10.1038/nphoton.2009.32 contributor: fullname: S Pimputkar – volume: 91 start-page: 181113 year: 2007 ident: 8321_CR11 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2805197 contributor: fullname: YL Li – volume: 35 start-page: 3285 year: 2010 ident: 8321_CR13 publication-title: Opt. Lett. doi: 10.1364/OL.35.003285 contributor: fullname: Y-K Kuo – volume: 1 start-page: 307 year: 2007 ident: 8321_CR2 publication-title: Laser Photon. Rev. doi: 10.1002/lpor.200710019 contributor: fullname: JM Phillips – volume: 308 start-page: 1274 year: 2005 ident: 8321_CR3 publication-title: Science doi: 10.1126/science.1108712 contributor: fullname: EF Schubert |
| SSID | ssj0000422 |
| Score | 2.148094 |
| Snippet | The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron... |
| SourceID | crossref springer |
| SourceType | Aggregation Database Publisher |
| StartPage | 1757 |
| SubjectTerms | Characterization and Evaluation of Materials Condensed Matter Physics Machines Manufacturing Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films |
| Title | Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers |
| URI | https://link.springer.com/article/10.1007/s00339-014-8321-7 |
| Volume | 116 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8JAEJ7wiIkefKBGfJA9eNIsgXa7bY-gPNTISRI8NbvbLRKwECgXf7272wIS9cC1nWya2enstzPfzADcuiJS14aIY4t7TF1Qahx7xK9jj3qUh1JhZldXI7_2aLdPngfOIAfWOnQRj6urjKRx1OtaNz11TFN7CNbDdbCbh6Kjp1IXoNjovL-0Nv6XpLkDnyj_a_t0lcv8a5Ht02g7FWpOmPZRWvW3MI0JNbFkXF0mvCq-frdt3OHjj-EwA5yokVrICeRkXIKDH20IS7BnaKBicQrDVvxhKAFotikoQNMIPcUd1kMT03VEfo4MWRqFo2koF0iHcjMBFodIk9QzJhgezlmoFktf6s4U8wnTGP8M-u3W20MXZ6MYsLAdL8GEe76CKqFPmMvcSBBqCUq54yvEwGwqPSkVdmRU1GlElA9lvi2Z67iChYSrh_Y5FOJpLC8A6VhTpECTkIIQhR-UqbC6sGwnojUharwMd6stCWZpx41g3VvZ6DFQegy0HgO3DPcrhQfZz7f4X_pyJ-kr2Lf0jpl4yzUUkvlS3igEkvCKMrnmY7NdyUyvAvm-1fgGE8TS-w |
| link.rule.ids | 315,786,790,27957,27958,41116,41558,42185,42627,52146,52269 |
| linkProvider | Springer Nature |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwED5BKwQMPAqI8vTABHLVJo6TjBXqiz6mVipTZDtOqShp1aQLvx47j0IRDF2Tk2Wdz-fPd9-dAR5sEahrQ8CxwR2mLihVjh3i1rBDHcp9qTCzrauR-wPaHpGXsTXO6rijnO2epyQTT70udtPPjmluD8H6dR1s70KRqAPKKkCx3nrtNr4dMEmTBy5RDth0aZ7M_GuQzeNoMxeaHDHNYxjmk0uZJe-VVcwr4vNX38YtZ38CRxnkRPXURk5hR4YlOPzRiLAEewkRVERnMGmEbwkpAC2-SwrQPECdsMUGaJb0HZEf04Qujfzp3JcR0sHcTICFPtI09YwLhidL5qvB0p-6N8VyxjTKP4dRszF8buPsMQYsTMuJMeGOq8CK7xJmMzsQhBqCUm65CjMwk0pHSoUeGRU1GhDlRZlrSmZbtmA-4eqjeQGFcB7KS0A62hQo2CSkIEQhCGUsrCYM0wpoVYgqL8NjvibeIu254a27Kyd69JQePa1Hzy7DU65wL9t-0f_SV1tJ38N-e9jveb3OoHsNB4ZevST6cgOFeLmStwqPxPwus78v-2DUdA |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDLZgCAQHBAPEeObACRRta9OkPU6wsfGYODBptypJkzFpdNNW_j9J2m5MggPX1srBbu0v9mcb4IZJba4NWmBPhNxcUBoChyRq4pCGVCTKYGZmu5Ff-7Q7IE_DYFjsOV2UbPeyJJn3NNgpTWlWnyW6vmx8syvILM-HYLtpB7NN2LKR0XK6Bl5r5YpJXkaIiHHFfkTLsuZvR6wHpvWqqAs2nQPYL1AiauVmPYQNlVZh78fswCpsO-6mXBzBqJ1-uDo-mq26ANBUo176yPto4kaFqM-xYzijZDxN1ALZ_GshwNMEWWZ5Qd_CozlPzGH5SztOYj7hFpgfw6DTfr_v4mJ_ApZ-EGaYiDAy-CKJCGecaUmoJykVQWTCPPepCpUygI9T2aSaGMfHI19xFjDJEyLMQ_8EKuk0VaeAbIJIG6QjlSTEBH1jX96Unh9o2pCyIWpwWyovnuVjMuLlQGSn6dhoOraajlkN7kr1xsUfs_hb-uxf0tew8_bQiV96_edz2PWseV2-5AIq2fxLXRoEkYkr95V8A8qWu_k |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Enhanced+performance+of+InGaN+light-emitting+diodes+with+InGaN+and+composition-graded+InGaN+interlayers&rft.jtitle=Applied+physics.+A%2C+Materials+science+%26+processing&rft.au=Yang%2C+Yu-Jue&rft.au=Zeng%2C+Yi-Ping&rft.date=2014-01-01&rft.pub=Springer+Berlin+Heidelberg&rft.issn=0947-8396&rft.eissn=1432-0630&rft.volume=116&rft.issue=4&rft.spage=1757&rft.epage=1760&rft_id=info:doi/10.1007%2Fs00339-014-8321-7&rft.externalDocID=10_1007_s00339_014_8321_7 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0947-8396&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0947-8396&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0947-8396&client=summon |