Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers

The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances,...

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Bibliographic Details
Published inApplied physics. A, Materials science & processing Vol. 116; no. 4; pp. 1757 - 1760
Main Authors Yang, Yu-Jue, Zeng, Yi-Ping
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 2014
Subjects
Characterization and Evaluation of Materials
Condensed Matter Physics
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
Barrier Height
Energy Band Diagram
Internal Quantum Efficiency
Potential Barrier Height
Electron Blocking Layer
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Summary:The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances, and internal quantum efficiency (IQE) are investigated. Simulation results show that the light output power and IQE are both largely improved over the conventional LED structure due to the improvement in hole injection efficiency and electron blocking capability, especially for the LED with composition-graded InGaN interlayer.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8321-7