Evaluation of barrier height and thickness in tunneling junctions by numerical calculation on tunnel probability

• Published in: Thin solid films Vol. 505; no. 1; pp. 67 - 70
• Main Authors: Arakawa, N., Otaka, Y., Shiiki, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 18.05.2006; Elsevier Science
• Subjects: Barrier height; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; General theory and models of magnetic ordering; Macroscopic quantum phenomena in magnetic systems; Magnetic properties and materials; Numerical calculation; Physics; Tunneling junctions; Two-layer model; Barrier height; Numerical calculation; Two-layer model; Tunneling junctions; Temperature dependence; Inorganic compounds; Binary compounds; Two layer model; Aluminium; High temperature; Experimental study; Cobalt; Thickness; Time dependence; Transition elements; Tunnel junction; Oxidation; IV characteristic; Aluminium oxides
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.10.043

The barrier height and thickness of Al/AlO x /Al and Co/AlO x /Co tunneling junctions were evaluated from current–voltage ( I– V) data by fitting the numerical calculation of tunnel probability. As a calculation model, one-layer and two-layer models of AlO x were assumed. The results of the one-layer model showed a physically unexpected relation between barrier height and thickness. The two-layer model showed no such relation. The results of the two-layer model showed that insulators of Al/AlO x /Al junctions were oxidized more incompletely as oxidation time was increased and insulators of Co/AlO x /Co junctions were oxidized more completely at higher oxidation temperatures.