Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

• Published in: Microelectronic engineering Vol. 86; no. 4; pp. 521 - 523
• Main Authors: Choi, Sookyung, Yan, Minjun, Wang, Liang, Adesida, Ilesanmi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2009; Elsevier
• Subjects: Applied sciences; Electron-beam lithography (EBL); Electronics; Exact sciences and technology; Hydrogen silsesquioxane (HSQ); Microelectronic fabrication (materials and surfaces technology); Optoelectronic devices; Scanning transmission electron microscopy (STEM); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Electron-beam lithography (EBL); Hydrogen silsesquioxane (HSQ); Scanning transmission electron microscopy (STEM); Nanometer scale; Microelectronic fabrication; EEL spectroscopy; Electron beam lithography; Optoelectronic device; Resist; Scanning transmission electron microscopy; Light emitting diode; Edge emission; STEM
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2008.12.055

Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si 3N 4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.