Study of degradation mechanism of blue light emitting diodes

• Published in: Thin solid films Vol. 483; no. 1; pp. 378 - 381
• Main Authors: Uddin, A., Wei, A.C., Andersson, T.G.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.07.2005; Elsevier Science
• Subjects: Aging mechanism; Applied sciences; Electronics; Exact sciences and technology; Light emitting diode; Light-emitting devices; Optoelectronic devices; Reliability; Semiconductor; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Aging mechanism; Semiconductor; Reliability; Light emitting diode; Quantum well; Voltage current curve; Non radiative recombination; Ageing; VPE; Crystal growth from vapors; Experimental study; Gallium nitride; Inorganic compound; Degradation; Time dependence; MOVPE method; Indium nitride; Nanostructured materials; Defect formation; III-V semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.01.018

We have studied the degradation mechanism of GaN base blue light emitting diodes by the current–voltage and light–current characteristics driving high currents through the diodes for various times. This was a result of an increased non-radiative recombination in the active region. The aging effects were not observed at the high bias region due to the saturation of non-radiative recombination centres. The mechanism of the increased non-radiative recombination centres may be related with the generation of defects in the active region due to the high current flow through quantum well structure and the increase of light emitting diode chip temperature.