Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc Oxide TFTs Through C- V Characterization

• Published in: IEEE electron device letters Vol. 32; no. 6; pp. 761 - 763
• Main Authors: BAE, Hagyoul, KIM, Sungchul, BAE, Minkyung, JA SUN SHIN, KONG, Dongsik, JUNG, Hyunkwang, JANG, Jaeman, LEE, Jieun, DAE HWAN KIM, DONG MYONG KIM
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2011; Institute of Electrical and Electronics Engineers
• Subjects: Amorphous; Applied sciences; Asymmetry; Capacitance; Devices; drain resistance; Drains; Electrical resistance measurement; Electronics; Exact sciences and technology; Extraction; Gates; Logic gates; nonlinear model; Oxides; parameter extraction; parasitic resistance; Resistance; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; source resistance; Thin film transistors; thin-film transistors (TFTs); Transistors; Amorphous material; Voltage current curve; Gallium oxide; nonlinear model; Modeling; Indium oxide; Parameter extraction; thin-film transistors (TFTs); Amorphous; Direct current; Non linear model; source resistance; drain resistance; Zinc oxide; Parasitic resistance; Thin film transistor; Voltage capacity curve; Damaging
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2127438

Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD , respectively, from the total resistance R TOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I - V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C - V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I - V characteristics.