Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc Oxide TFTs Through C- V Characterization
Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD , respectively, from the total resistance R TOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-...
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Published in | IEEE electron device letters Vol. 32; no. 6; pp. 761 - 763 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2011
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD , respectively, from the total resistance R TOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I - V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C - V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I - V characteristics. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2011.2127438 |