GaSb grown from Sn solvent at low temperatures by LPE

The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is sho...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 167; no. 1; p. 012024
Main Authors H, Compeán V, F, de Anda, A, Mishurnyi V, Yu, Gorbatchev A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.05.2009
Subjects
Low temperature
Phase diagrams
Photoluminescence
Physics
Solvents
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Summary:The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is shown the Sn incorporates into the grown layers and that it behaves as an acceptor. The photoluminescence spectra of the grown layers with different Sn contents show characteristic peaks that can be attributed to different recombination processes.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/167/1/012024