A low-loss V-groove coplanar waveguide on an SOI substrate

A novel low-loss 50-Ω coplanar waveguide with V-groove on an SOI substrate is proposed.Through a CMOS-compatible process and anisotropic etching of silicon, surface silicon is removed from the SOI.The measured results show that the V-groove coplanar waveguide causes about 50% less loss than the conv...

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Published inJournal of semiconductors Vol. 30; no. 7; pp. 51 - 53
Main Author 赵宇航 童家榕 曾璇 王勇
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.07.2009
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ISSN1674-4926
DOI10.1088/1674-4926/30/7/074004

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Abstract A novel low-loss 50-Ω coplanar waveguide with V-groove on an SOI substrate is proposed.Through a CMOS-compatible process and anisotropic etching of silicon, surface silicon is removed from the SOI.The measured results show that the V-groove coplanar waveguide causes about 50% less loss than the conventional one at a high frequency of up to 40 GHz.
AbstractList A novel low-loss 50-Ω coplanar waveguide with V-groove on an SOI substrate is proposed.Through a CMOS-compatible process and anisotropic etching of silicon, surface silicon is removed from the SOI.The measured results show that the V-groove coplanar waveguide causes about 50% less loss than the conventional one at a high frequency of up to 40 GHz.
Author 赵宇航 童家榕 曾璇 王勇
AuthorAffiliation State Key Laboratory of ASIC & System, Microelectronics Department, Fudan University, Shanghai 201203, China Shanghai IC Research and Development Center, Shanghai 201203, China
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10.1109/TED.2008.923564
10.1016/j.sse.2006.10.008
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Notes SOI; coplanar waveguide; low loss; radio frequency
coplanar waveguide
radio frequency
TN814
low loss
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SOI
11-5781/TN
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Gianesello F (5) 2006
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Kim J (6) 2003
Wu Y H (1) 2000; 21
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Snippet A novel low-loss 50-Ω coplanar waveguide with V-groove on an SOI substrate is proposed.Through a CMOS-compatible process and anisotropic etching of silicon,...
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StartPage 51
SubjectTerms CMOS兼容
GHz
SOI衬底
V型槽
低损耗
共面波导
各向异性刻蚀
硅表面
Title A low-loss V-groove coplanar waveguide on an SOI substrate
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