A low-loss V-groove coplanar waveguide on an SOI substrate

A novel low-loss 50-Ω coplanar waveguide with V-groove on an SOI substrate is proposed.Through a CMOS-compatible process and anisotropic etching of silicon, surface silicon is removed from the SOI.The measured results show that the V-groove coplanar waveguide causes about 50% less loss than the conv...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 30; no. 7; pp. 51 - 53
Main Author 赵宇航 童家榕 曾璇 王勇
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.07.2009
Subjects
CMOS兼容
GHz
SOI衬底
V型槽
低损耗
共面波导
各向异性刻蚀
硅表面
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/30/7/074004

Cover

More Information
Summary:A novel low-loss 50-Ω coplanar waveguide with V-groove on an SOI substrate is proposed.Through a CMOS-compatible process and anisotropic etching of silicon, surface silicon is removed from the SOI.The measured results show that the V-groove coplanar waveguide causes about 50% less loss than the conventional one at a high frequency of up to 40 GHz.
Bibliography:SOI; coplanar waveguide; low loss; radio frequency
coplanar waveguide
radio frequency
TN814
low loss
TN4
SOI
11-5781/TN
ISSN:1674-4926
DOI:10.1088/1674-4926/30/7/074004