Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering
SiGe epitaxial growth on Si has been of interest for a number of years. In this work we consider the addition of 1 to 6% C into both Si and SiGe epitaxial material. We have used a solid, and a gas source, (acetylene), within a solid source SiGe molecular beam epitaxy system to produce a C flux. We h...
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| Published in | Japanese Journal of Applied Physics Vol. 33; no. 4S; p. 2388 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
1994
|
| Online Access | Get full text |
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| Summary: | SiGe epitaxial growth on Si has been of interest for a number of years. In this work we consider the addition of 1 to 6% C into both Si and SiGe epitaxial material. We have used a solid, and a gas source, (acetylene), within a solid source SiGe molecular beam epitaxy system to produce a C flux. We have produced high-crystalline-quality Si
1-
y
C
y
and Si
1-
x
-
y
Ge
x
C
y
material using both approaches. In addition we demonstrate strain-symmetrical short-period superlattice structures grown on (100) Si with high Ge compositions ranging from 20% up to 100% Ge, at 100% Ge the Ge/Si
1-
y
C
y
superlattice has an interface mismatch of 7%. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.33.2388 |