Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication

Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon‐on‐insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a...

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Published inAdvanced materials (Weinheim) Vol. 17; no. 17; pp. 2098 - 2102
Main Authors He, R., Gao, D., Fan, R., Hochbaum, A. I., Carraro, C., Maboudian, R., Yang, P.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 05.09.2005
WILEY‐VCH Verlag
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Summary:Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon‐on‐insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a simple and rational way to realize nanowire‐based integrated circuits.
Bibliography:istex:3F2136A7D7E48BBE5103E9AB3470B0FC9EEDA98E
This work was supported by the National Science Foundation (NIRT grant # DMI-0304209). P. Y. is an Alfred P. Sloan Research Fellow. Work at the Lawrence Berkeley National Laboratory was supported by the Office of Science, Basic Energy Sciences, Division of Materials Science of the U. S. Department of Energy. We thank the National Center for Electron Microscopy for the use of their facilities.
ark:/67375/WNG-3LJJXMNW-3
ArticleID:ADMA200401959
This work was supported by the National Science Foundation (NIRT grant # DMI‐0304209). P. Y. is an Alfred P. Sloan Research Fellow. Work at the Lawrence Berkeley National Laboratory was supported by the Office of Science, Basic Energy Sciences, Division of Materials Science of the U. S. Department of Energy. We thank the National Center for Electron Microscopy for the use of their facilities.
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200401959