Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication
Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon‐on‐insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a...
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Published in | Advanced materials (Weinheim) Vol. 17; no. 17; pp. 2098 - 2102 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
05.09.2005
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon‐on‐insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a simple and rational way to realize nanowire‐based integrated circuits. |
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Bibliography: | istex:3F2136A7D7E48BBE5103E9AB3470B0FC9EEDA98E This work was supported by the National Science Foundation (NIRT grant # DMI-0304209). P. Y. is an Alfred P. Sloan Research Fellow. Work at the Lawrence Berkeley National Laboratory was supported by the Office of Science, Basic Energy Sciences, Division of Materials Science of the U. S. Department of Energy. We thank the National Center for Electron Microscopy for the use of their facilities. ark:/67375/WNG-3LJJXMNW-3 ArticleID:ADMA200401959 This work was supported by the National Science Foundation (NIRT grant # DMI‐0304209). P. Y. is an Alfred P. Sloan Research Fellow. Work at the Lawrence Berkeley National Laboratory was supported by the Office of Science, Basic Energy Sciences, Division of Materials Science of the U. S. Department of Energy. We thank the National Center for Electron Microscopy for the use of their facilities. ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200401959 |