Hard magnetic FePt films for atom chips

In this work FePt hard magnetic films were prepared with a thickness of 250 and 500 nm for making atom chips. We choose FePt because it has high magnetocrystalline anisotropy as well as high saturation magnetization. The FePt films were deposited at room temperature and at 350 °C using Molecular Bea...

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Published inPhysica status solidi. C Vol. 1; no. 12; pp. 3702 - 3705
Main Authors Xing, Y. T., Eljaouhari, A., Barb, I., Gerritsma, R., Spreeuw, R. J. C., Goedkoop, J. B.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 01.12.2004
WILEY‐VCH Verlag
Subjects
68.55.Jk
75.50.Ww
75.70.Ak
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Summary:In this work FePt hard magnetic films were prepared with a thickness of 250 and 500 nm for making atom chips. We choose FePt because it has high magnetocrystalline anisotropy as well as high saturation magnetization. The FePt films were deposited at room temperature and at 350 °C using Molecular Beam Epitaxy on a Si substrate. After post annealing, the samples have high in‐plane and out‐of‐plane coercivity (Hc = 8.0 kOe and 8.34 kOe, respectively) and remanent magnetization (Mr/Ms = 0.90, 0.93, respectively). Whereas the samples deposited at room temperature have many cracks on the surface, the samples deposited at 350 °C are free of cracks and their surfaces are mirror‐like. The magnetized sample keeps the magnetization after baking in vacuum at 170 °C for 24 hours. A calculation shows that such samples can be used to trap cold atoms after lithographic patterning. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-N4P550QL-B
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ArticleID:PSSC200405538
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SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1610-1634
1610-1642
DOI:10.1002/pssc.200405538