High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

• Published in: Physica Status Solidi (b) Vol. 244; no. 5; pp. 1623 - 1626
• Main Authors: Lott, K., Shinkarenko, S., Volobujeva, O., Türn, L., Nirk, T., Öpik, A., Nisumaa, R., Kallavus, U., Nõges, M., Mikli, V., Viljus, M., Gorokhova, E., Anan'eva, G., Grebennik, A., Vishnjakov, A.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2007; WILEY‐VCH Verlag
• Subjects: 61.72.Ji; 64.70.Ja; 72.80.Ey
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200675117

High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe:In and of CdSe:In are compared. There are differencies in In‐doping mechanisms of II–VI compounds. When HTEC isotherms and isobars of ZnSe:In and of CdSe:In, measured under metal component vapour pressure give both n‐type conductivity then differences appear in the results of measurements under the selenium vapor pressure (p Se 2). ZnSe:In isotherms in the last case are characterized by the conductivity type conversion but no such drastic change of HTEC type is observed on CdSe:In isotherms. Under the conditions of p Se 2, the activation energy of HTEC isobars for ZnSe:In is ΔE ≈ 1.3–1.6 eV and for CdSe:In is ΔE ≈ 1.2 eV. The onefold ionized substitutional In at Zn place is proposed to be compensated by native defects in ZnS:In and in CdSe:In under high p Se 2. This native defect may be onefold ionized zinc vacancy for ZnSe:In and twofold ionized cadmium vacancy for CdSe:In. Association of defects occur at lower temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)