AMR and magnetometry studies of ultra thin GaMnAs films

We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga0.95Mn0.05As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magneto...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 3; no. 12; pp. 4078 - 4081
Main Authors Rushforth, A. W., Giddings, A. D., Edmonds, K. W., Campion, R. P., Foxon, C. T., Gallagher, B. L.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.01.2007
WILEY‐VCH Verlag
Subjects
75.47.−m
75.50.Pp
75.70.Ak
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Summary:We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga0.95Mn0.05As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-S0F4C5K6-W
EPSRC - No. GR/S81407/01
istex:0003E89C9C9426FFC08A969D753BE0F9997347FC
ArticleID:PSSC200672836
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200672836