Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE

We report on transmission electron microscopy (TEM) characterisation of nano‐islands formed during atmospheric pressure growth of InGaN on GaN by metal‐organic vapour phase epitaxy (MOVPE). Although initial results seemed to indicate that three‐dimensional InGaN nano‐islands had formed, detailed TEM...

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Published inPhysica status solidi. C Vol. 3; no. 6; pp. 1544 - 1547
Main Authors van der Laak, N. K., Oliver, R. A., Barnard, J. S., Cherns, P. D., Kappers, M. J., Humphreys, C. J.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.06.2006
WILEY‐VCH Verlag
Subjects
68.37.Lp
68.55.Jk
68.65.Hb
81.05.Ea
81.15.Gh
82.80.Pv
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Summary:We report on transmission electron microscopy (TEM) characterisation of nano‐islands formed during atmospheric pressure growth of InGaN on GaN by metal‐organic vapour phase epitaxy (MOVPE). Although initial results seemed to indicate that three‐dimensional InGaN nano‐islands had formed, detailed TEM characterisation revealed that the islands do not have a hexagonal crystal structure, and electron energy loss spectroscopy suggests that the observed structures are metallic indium droplets formed during growth, which may be partially nitrided, rather than the expected strain‐induced epitaxial InGaN nano‐islands. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-RPWR70TB-D
istex:ADE7E27C19DD819FD0280465273F76FDF88752DC
ArticleID:PSSC200565164
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200565164