Dynamical effects and terahertz harmonic generation in low-doped bulk semiconductors and submicron structures

• Published in: Physica status solidi. C Vol. 3; no. 7; pp. 2502 - 2505
• Main Authors: Persano Adorno, D., Capizzo, M. C., Zarcone, M.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.08.2006; WILEY‐VCH Verlag
• Subjects: 05.10.Ln; 42.65.Ky; 72.20.Ht; 72.30.+q
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200668094

We present results obtained using a three‐dimensional multivalleys Monte Carlo (MC) model to simulate the nonlinear carrier dynamics under the influence of an intense sub‐terahertz electric field in a doped bulk semiconductor. By self‐consistently coupling a one‐dimensional Poisson solver to the ensemble MC code we simulate also the nonlinear carrier dynamics in n+nn+ structures operating under large‐amplitude periodic signals and investigate the voltage‐current characteristic hysteresis cycle and the high‐order harmonic efficiency. For both cases we discuss the dependence of the nonlinearities and of the harmonic generation efficiency on the frequency and the intensity of the alternating signal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)