Solvothermal growth of highly oriented wurtzite-structured ZnO nanotube arrays on zinc foil

ZnO nanotube arrays were synthesized on zinc foil by a simple solvothermal approach. In this approach, zinc foil was used not only as a substrate but also as a zinc‐ion source for the direct growth of ZnO nanotube arrays. X‐ray diffraction (XRD) analysis and Scanning electron microscope (SEM) images...

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Published inCrystal research and technology (1979) Vol. 44; no. 6; pp. 619 - 623
Main Authors Yang, J. H., Zheng, J. H., Zhai, H. J., Yang, L. L., Liu, L., Gao, M.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.06.2009
WILEY‐VCH Verlag
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Summary:ZnO nanotube arrays were synthesized on zinc foil by a simple solvothermal approach. In this approach, zinc foil was used not only as a substrate but also as a zinc‐ion source for the direct growth of ZnO nanotube arrays. X‐ray diffraction (XRD) analysis and Scanning electron microscope (SEM) images, indicated that the structure of the ZnO nanotube arrays on the zinc foil substrate was single‐crystalline with a wurtzite structure. The optical properties of the ZnO nanorod arrays were characterized by photoluminescence spectroscopies and Raman. Photoluminescence exhibited strong UV emission and a broad deep‐level (visible) emission emission at with 325 nm excitation. A possible mechanism is also proposed to account for the growth of the ZnO nanotube arrays. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:the Eleventh Five-Year Program for Science and Technology of Education Department of Jilin Province - No. 20080154; No. 20080156
istex:5D6017FFCB7106353F6F36FEF54705ED69588219
ArticleID:CRAT200800633
science and technology bureau of Key Program for Ministry of Education - No. 207025
National Programs for High Technology Research and Development of China - No. 2007AA032400448
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National Natural Science Foundation of China - No. 60778040; No. 60878039
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ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0232-1300
1521-4079
DOI:10.1002/crat.200800633