Bulk GaN growth by Gallium Vapor Transport technique

GaN crystals were grown in a dedicated, resistively heated reactor at 1165 °C and 600 Torr. In this approach, gaseous gallium was obtained by the decomposition of GaN powder while nitrogen was provided from the dissociation of ammonia. GaN was grown at a rate of exceeding 200 µm/hr by using this sta...

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Published inPhysica status solidi. C Vol. 2; no. 7; pp. 2032 - 2035
Main Authors Wu, Huaqiang, Konkapaka, Phanikumar, Makarov, Yuri, Spencer, Michael G.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.05.2005
WILEY‐VCH Verlag
Subjects
81.05.Ea
81.10.Bk
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Summary:GaN crystals were grown in a dedicated, resistively heated reactor at 1165 °C and 600 Torr. In this approach, gaseous gallium was obtained by the decomposition of GaN powder while nitrogen was provided from the dissociation of ammonia. GaN was grown at a rate of exceeding 200 µm/hr by using this stable Ga source. GaN single crystals grown using this method were extensively characterized by X‐ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary Ion Mass Spectrometry (SIMS), and Glow Discharge Mass Spectrometry (GDMS). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:istex:22D6E1BD9582B1C0408B6F12F454082AE91DB944
ArticleID:PSSC200461553
ark:/67375/WNG-QW3PJL25-M
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1610-1634
1610-1642
DOI:10.1002/pssc.200461553