Thick GaN layers on sapphire with various buffer layers

Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers. The crystallographic structu...

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Published inCrystal research and technology (1979) Vol. 42; no. 12; pp. 1297 - 1301
Main Authors Korbutowicz, R., Dumiszewska, E., Prażmowska, J.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.12.2007
WILEY‐VCH Verlag
Subjects
AlN
epitaxy
GaN
HVPE
MOVPE
thick GaN layer
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Summary:Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers. The crystallographic structure and the quality of the epitaxial thick GaN layers were determined. Comparison of the three types of thick layers was performed. Significant differences were observed. It was found that thick GaN deposited on the simplest MOVPE‐GaN/sapphire composite substrate has comparable structure's properties as the other, more complicated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:Wroclaw University of Technology
istex:1E73BCFEE45E9653D10D3558F8E543CC9E363EC9
ark:/67375/WNG-VP6VT23W-L
ArticleID:CRAT200711021
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.200711021