Furan substituted diketopyrrolopyrrole and thienylenevinylene based low band gap copolymer for high mobility organic thin film transistors

• Published in: Journal of materials chemistry Vol. 22; no. 33; pp. 17284 - 17292
• Main Authors: Sonar, Prashant, Zhuo, Jing-Mei, Zhao, Li-Hong, Lim, Kai-Ming, Chen, Jihua, Rondinone, Adam J., Singh, Samarendra P., Chua, Lay-Lay, Ho, Peter K. H., Dodabalapur, Ananth
• Format: Journal Article
• Language: English
• Published: United States 01.01.2012
• Subjects: ABSORPTION; AIR; ANNEALING; CHARGE TRANSPORT; COPOLYMERS; Devices; Electronics; ELECTRONS; FURANS; HOLE MOBILITY; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; IONIZATION; MATERIALS SCIENCE; Mathematical analysis; MORPHOLOGY; Organic semiconductors; PHOTOELECTRON SPECTROSCOPY; POLYMERS; Semiconductor devices; Semiconductors; SOLUBILITY; STABILITY; THIN FILMS; THIOPHENE; TRANSISTORS
• ISSN: 0959-9428; 1364-5501
• DOI: 10.1039/c2jm32376a

A novel solution processable donor-acceptor (D-A) based low band gap polymer semiconductor poly{3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrr ole-1,4-dione-alt-thienylenevinylene} (PDPPF-TVT), was designed and synthesized by a Pd-catalyzed Stille coupling route. An electron deficient furan based diketopyrrolopyrrole (DPP) block and electron rich thienylenevinylene (TVT) donor moiety were attached alternately in the polymer backbone. The polymer exhibited good solubility, film forming ability and thermal stability. The polymer exhibits wide absorption bands from 400 nm to 950 nm (UV-vis-NIR region) with absorption maximum centered at 782 nm in thin film. The optical band gap (E super(opt) sub(g)) calculated from the polymer film absorption onset is around 1.37 eV. The pi -energy band level (ionization potential) calculated by photoelectron spectroscopy in air (PESA) for PDPPF-TVT is around 5.22 eV. AFM and TEM analyses of the polymer reveal nodular terrace morphology with optimized crystallinity after 200 degree C thermal annealing. This polymer exhibits p-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistor (OTFT) devices. The highest hole mobility of 0.13 cm super(2) V super(-1) s super(-1) is achieved in bottom gate and top-contact OTFT devices with on/off ratios in the range of 10 super(6)-10 super(7). This work reveals that the replacement of thiophene by furan in DPP copolymers exhibits such a high mobility, which makes DPP furan a promising block for making a wide range of promising polymer semiconductors for broad applications in organic electronics.