Subthreshold and scaling of PtSi Schottky barrier MOSFETs

• Published in: Superlattices and microstructures Vol. 28; no. 5-6; pp. 501 - 506
• Main Authors: Calvet, L.E, Luebben, H, Reed, M.A, Wang, C, Snyder, J.P, Tucker, J.R
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2000
• Subjects: Schottky barrier source drain MOSFET, thermionic emission, subthreshold behavior, MOSFET scaling; Schottky barrier source drain MOSFET, thermionic emission, subthreshold behavior, MOSFET scaling
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1006/spmi.2000.0954

We examine the subthreshold behavior of metal oxide semiconductor field effect transistors (MOSFETs) with Schottky barrier (SB) source/drain and large on/off ratios. Thermionic emission dominates the drain current versus gate voltage curves and the sharp turn on is attributed to a decrease in the effective hole barrier with gate bias. We present a simple 1D model and find excellent agreement between the experimentally determined effective barriers and the calculated results. Smaller devices exhibit significantly degraded characteristics, which are attributed to a sub-surface punch-through of the source and drain depletion widths at zero gate bias. Implications for SBMOSFETs are discussed.