One-Volt, Solution-Processed InZnO Thin-Film Transistors

• Published in: IEEE electron device letters Vol. 42; no. 4; pp. 525 - 528
• Main Authors: Cai, Wensi, Li, Haiyun, Zang, Zhigang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; indium-zinc-oxide (IZO); Logic gates; one-volt operation; Performance evaluation; Semiconductor devices; Solution-processed; Surface morphology; Temperature measurement; Thin film transistors; thin-film transistors (TFTs)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2021.3062422

In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-film transistors (TFTs). The annealing temperature of IZO films are studied and found that devices annealed at 350 °C exhibit the best performance. With the use of a thin Al x O y layer as the gate dielectric, one-volt IZO TFTs are demonstrated, showing a high current on/off ratio of > 10 5 , a high mobility over 10 cm 2 /Vs, and a low subthreshold swing (SS) of 83 mV/dec, which is fairly close to the theoretical limit of SS at 300 K. Such a high device performance is also found comparable to those deposited using vacuum-based methods. As a result, the presented devices might possess a great potential in low-cost, low-power electronics.