Impact ionization in 0.1 μm metal-oxide-semiconductor field-effect transistors

The impact ionization rate in a silicon metal-oxide-semiconductor field-effect transistor (MOSFET) is universally plotted on a simple straight line when l n ( I sub / I d ) is plotted versus 1/( V ds - V dsat ). V dsat is the drain saturation voltage. However, we found a deviation from this universa...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 3B; pp. L345 - L348
Main Authors KURATA, H, NARA, Y, SUGII, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.03.1995
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Voltage current curve
Lightly doped drain
Universal equation
Saturation
Theoretical study
Two dimensional model
Experimental study
Velocity
Degradation
Field effect transistor
Electric field
Electron mobility
Impact ionization
Silicon
MOS transistor
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Summary:The impact ionization rate in a silicon metal-oxide-semiconductor field-effect transistor (MOSFET) is universally plotted on a simple straight line when l n ( I sub / I d ) is plotted versus 1/( V ds - V dsat ). V dsat is the drain saturation voltage. However, we found a deviation from this universal relationship for different gate voltages applied to the MOSFETs fabricated by 0.15 µ m technology. We show that the deviation is due to the gate-voltage dependence of the saturation electric field E sat , which results from the degradation of the effective surface mobility µ eff . The new method for finding a universal relationship is proposed.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.l345