Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

Abstract The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In...

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Bibliographic Details
Published inJournal of instrumentation Vol. 18; no. 9; p. P09010
Main Authors Kieseler, Jan, Dias de Almeida, Pedro Gonçalo, Kałuzińska, Oliwia Agnieszka, Mühlnikel, Marie Christin, Diehl, Leena, Sicking, Eva, Zehetner, Philipp
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.09.2023
Subjects
Defect annealing
Isothermal annealing
Luminosity
Radiation damage
Radiation effects
Radiation-hard detectors
Si microstrip and pad detectors
Silicon
Wafers
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Summary:Abstract The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8” silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from 6.5· 10 14 to 1 · 10 16 n eq /cm 2 .
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/18/09/P09010