Ion beam analysis of the concentration and thermal release of hydrogen in silicon nitride films prepared by ECR plasma CVD method
The concentration and thermal release of hydrogen from N-rich silicon nitride films prepared by ECR P-CVD deposition at high microwave powers 500 W have been investigated by means of the resonance nuclear reaction analysis and the elastic recoil detection analysis utilizing 6-8 MeV energy fluorine i...
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Published in | Japanese Journal of Applied Physics Vol. 27; no. 8; pp. 1406 - 1410 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.08.1988
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Subjects | |
Online Access | Get full text |
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Summary: | The concentration and thermal release of hydrogen from N-rich silicon nitride films prepared by ECR P-CVD deposition at high microwave powers 500 W have been investigated by means of the resonance nuclear reaction analysis and the elastic recoil detection analysis utilizing 6-8 MeV energy fluorine ion beams. The following results are obtained: (1) Hydrogen concentrations in the films examined were in the range of 0.8-2.2×10
22
at/cm
3
, corresponding to 13-18 at% H. (2) Two types of hydrogen were found based on isochronal annealing studies. The first was the hydrogen released from the film at 400-600 K, which corresponds to 15% of the whole amount of hydrogen, the second was at 700–1100 K. The former can be attributed to the Si-H bonds and the latter to the N-H bonds. (3) The activation energies for detrapping are 0.34 eV and 1.14 eV for Si-H and N-H bonds, respectively. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.27.1406 |