Ion beam analysis of the concentration and thermal release of hydrogen in silicon nitride films prepared by ECR plasma CVD method

• Published in: Japanese Journal of Applied Physics Vol. 27; no. 8; pp. 1406 - 1410
• Main Authors: KUROI, T, UMEZAWA, K, YAMANE, J, SHOJI, F, OURA, K, HANAWA, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.08.1988
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Plasma; Annealing; Impurity density; Impurity; Silicon Nitrides; Electron cyclotron resonance; Ion beam; Experimental study; Nuclear reaction; Chemical vapor deposition; Activation energy; Inorganic compound
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.27.1406

The concentration and thermal release of hydrogen from N-rich silicon nitride films prepared by ECR P-CVD deposition at high microwave powers 500 W have been investigated by means of the resonance nuclear reaction analysis and the elastic recoil detection analysis utilizing 6-8 MeV energy fluorine ion beams. The following results are obtained: (1) Hydrogen concentrations in the films examined were in the range of 0.8-2.2×10 22 at/cm 3 , corresponding to 13-18 at% H. (2) Two types of hydrogen were found based on isochronal annealing studies. The first was the hydrogen released from the film at 400-600 K, which corresponds to 15% of the whole amount of hydrogen, the second was at 700–1100 K. The former can be attributed to the Si-H bonds and the latter to the N-H bonds. (3) The activation energies for detrapping are 0.34 eV and 1.14 eV for Si-H and N-H bonds, respectively.