Coaxial impact collision ion scattering spectroscopy measurements of As/Si(100) structure prepared by ionized cluster beam method

• Published in: Japanese Journal of Applied Physics Vol. 32; no. 10; pp. 4485 - 4489
• Main Authors: SHINOHARA, M, SARAIE, J, ISHIYAMA, O, OHTANI, F, MITAMURA, S
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.10.1993
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Surface cleaning; Gallium arsenides; Ion implantation; Inorganic compounds; Semiconductor materials; Arsenic; Epitaxy; Binary compounds; Surface treatments; Experimental study; Substrates; Surface structure; Ion scattering analysis; Thin films; Cluster beams; Surface reconstruction; Nonmetals; Heteroepitaxy; Silicon; Ion spectroscopy
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.32.4485

The surface structure of a Si (100) substrate exposed to an As ionized cluster beam (ICB) prior to epitaxial growth of GaAs was investigated by means of coaxial impact collision ion scattering spectroscopy (CAICISS). As a result of the measurement, first, it was proven that both As and Si dimers were formed after As ICB exposure. Second, both As and Si atoms form double domains of 2×1 and 1×2, and both As and Si areas of one domain are larger than those of the other domain in the case of a 3°-off Si substrate. Furthermore, it is likely that As atoms terminate Si atoms as if the As atoms replace the top Si layer. Third, the Si surface is not damaged by As ICB exposure, and the As ions seem to be implanted to the substitutional sites.