Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental re...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 9; pp. 147 - 150
Main Author 武春波 周玉琴 李国荣 刘丰珍
Format Journal Article
LanguageChinese
English
Published IOP Publishing 01.09.2011
Subjects
PECVD
异质结
晶体硅
氢等离子体
治疗
状态
界面特性
等离子体增强化学气相沉积
Online AccessGet full text

Cover

More Information
Summary:Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.
Bibliography:Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.
11-5781/TN
Wu Chunbo,Zhou Yuqin~＋,Li Guorong,and Liu Fengzhen Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
silicon heterojunction; PECVD; interface properties; initial transient state of plasma; hydrogen plasma pre-treatment
ISSN:1674-4926
DOI:10.1088/1674-4926/32/9/096001