Suppression of emitter size effect on current gain in AlGaAs/GaAs HBTs

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 24; no. 10; pp. 1368 - 1369
Main Authors NAKAJIMA, O, NAGATA, K, ITO, H, ISHIBASHI, T, SUGETA, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.01.1985
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Suppression
Aluminium Gallium Arsenides Mixed
Dimensions
Transistor
Transistor emitter
Electric current
Gain
Heterojunction
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.24.1368