Improved uniformity of resistivity distribution in LEC semi-insulating GaAs produced by annealing
Two-dimensional distribution of resistivity in two-inch diameter crystals of LEC semi-insulating GaAs has been studied by the three-electrode guard method. Results are given in the form of a contour map for the wafers before and after annealing. Very significant fluctuations in resistivity on a 280...
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Published in | Japanese Journal of Applied Physics Vol. 23; no. 8; pp. L602 - L605 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.01.1984
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Subjects | |
Online Access | Get full text |
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Summary: | Two-dimensional distribution of resistivity in two-inch diameter crystals of LEC semi-insulating GaAs has been studied by the three-electrode guard method. Results are given in the form of a contour map for the wafers before and after annealing. Very significant fluctuations in resistivity on a 280 µm scale are observed for as-grown crystals, although the average of resistivity corresponds inversely to etch pit densities. The homogeneity of crystal grown at an 18 mm/h pulling rate, about two times faster than usual, is remarkably improved by annealing at 850°C for 20 minutes or longer. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.23.l602 |