Improved uniformity of resistivity distribution in LEC semi-insulating GaAs produced by annealing

Two-dimensional distribution of resistivity in two-inch diameter crystals of LEC semi-insulating GaAs has been studied by the three-electrode guard method. Results are given in the form of a contour map for the wafers before and after annealing. Very significant fluctuations in resistivity on a 280...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 23; no. 8; pp. L602 - L605
Main Authors OBOKATA, T, MATSUMURA, T, TERASHIMA, K, ORITO, F, KIKUTA, T, FUKUDA, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.01.1984
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility; piezoresistance
Physics
Annealing
Electrical conductivity
Semiconductor materials
Homogeneity
Experimental study
Single crystal
Inorganic compound
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Summary:Two-dimensional distribution of resistivity in two-inch diameter crystals of LEC semi-insulating GaAs has been studied by the three-electrode guard method. Results are given in the form of a contour map for the wafers before and after annealing. Very significant fluctuations in resistivity on a 280 µm scale are observed for as-grown crystals, although the average of resistivity corresponds inversely to etch pit densities. The homogeneity of crystal grown at an 18 mm/h pulling rate, about two times faster than usual, is remarkably improved by annealing at 850°C for 20 minutes or longer.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.23.l602