Improvement of Thermal Stability and Photoelectric Performance of Cs2PbI2Cl2/CsPbI2.5Br0.5 Perovskite Solar Cells by Triple-Layer Inorganic Hole Transport Materials
Conventional hole transport layer (HTL) Spiro-OMeTAD requires the addition of hygroscopic dopants due to its low conductivity and hole mobility, resulting in a high preparation cost and poor device stability. Cuprous thiocyanate (CuSCN) is a cost-effective alternative with a suitable energy structur...
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Published in | Nanomaterials (Basel, Switzerland) Vol. 14; no. 9; p. 742 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Basel
MDPI AG
01.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Conventional hole transport layer (HTL) Spiro-OMeTAD requires the addition of hygroscopic dopants due to its low conductivity and hole mobility, resulting in a high preparation cost and poor device stability. Cuprous thiocyanate (CuSCN) is a cost-effective alternative with a suitable energy structure and high hole mobility. However, CuSCN-based perovskite solar cells (PSCs) are affected by environmental factors, and the solvents of an HTL can potentially corrode the perovskite layer. In this study, a Co3O4/CuSCN/Co3O4 sandwich structure was proposed as an HTL for inorganic Cs2PbI2Cl2/CsPbI2.5Br0.5 PSCs to address these issues. The Co3O4 layers can serve as buffer and encapsulation layers, protecting the perovskite layer from solvent-induced corrosion and enhancing hole mobility at the interface. Based on this sandwich structure, the photovoltaic performances of the Cs2PbI2Cl2/CsPbI2.5Br0.5 PSCs are significantly improved, with the power conversion efficiency (PCE) increasing from 9.87% (without Co3O4) to 11.06%. Furthermore, the thermal stability of the devices is also significantly enhanced, retaining 80% of its initial PCE after 40 h of continuous aging at 60 °C. These results indicate that the Co3O4/CuSCN/Co3O4 sandwich structure can effectively mitigate the corrosion of the perovskite layer by solvents of an HTL and significantly improves the photovoltaic performance and thermal stability of devices. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2079-4991 2079-4991 |
DOI: | 10.3390/nano14090742 |