Characterization and Compact Modeling of Self-Aligned Short-Channel Organic Transistors

In this paper, we present the characterization and modeling of downscaled flexible organic thin-film transistors fabricated by photolithography and self-alignment of the source and drain contacts to the gate. A SPICE model based on the unified model and extraction method for thin-film transistors (T...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 65; no. 10; pp. 4563 - 4570
Main Authors Torres-Miranda, Miguel, Petritz, Andreas, Karner-Petritz, Esther, Prietl, Christine, Sauter, Eric, Zharnikov, Michael, Gold, Herbert, Stadlober, Barbara
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Dependence
Gold
Integrated circuit modeling
Logic gates
Modelling
Organic thin film transistors
Organic thin-film transistors (OTFTs)
parameter extraction
Photolithography
Resistance
Self alignment
Semiconductor devices
SPICE compact model
Thin film transistors
transistor characterization
Transistors
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Summary:In this paper, we present the characterization and modeling of downscaled flexible organic thin-film transistors fabricated by photolithography and self-alignment of the source and drain contacts to the gate. A SPICE model based on the unified model and extraction method for thin-film transistors (TFTs) is tailored with high accuracy for the subthreshold regime in order to include the channel length dependence of two semiempirical parameters, viz., the effective mobility and the onset voltage. In addition, we demonstrate the modeling of the hump effect, a phenomenon often present in TFTs fabricated by lithographic methods.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2867364