GaAs/AlAs trench-buried quantum wires (<20 nm × 20 nm) fabricated by metalorganic chemical vapor deposition on nonplanar substrates

We report the fabrication of quantum wires buried in U-grooved trenches grown by metalorganic chemical vapor deposition on V-grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed as a result of the faceting of (110) planes, and lateral growth of these planes red...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 12B; pp. 6224 - 6227
Main Authors SOGAWA, T, ANDO, S, KANBE, H
Format Conference Proceeding Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.12.1993
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Aluminium arsenides
Crystal growth
Quantum wires
Gallium arsenides
Inorganic compounds
Semiconductor materials
Trench technology
Organometallic compounds
Photoluminescence
Binary compounds
Buried heterostructures
Experimental study
CVD
Temperature range 13-65 K
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Summary:We report the fabrication of quantum wires buried in U-grooved trenches grown by metalorganic chemical vapor deposition on V-grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed as a result of the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross-sectional scanning electron micrograph shows that these trench-buried structures have GaAs wires of about 20 nm lateral width. Photoluminescence (PL) blue shifts and strong PL anisotropy confirm two-dimensional quantum confinement.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.6224