Low energy focused ion beam system and application to low damage microprocess

We have developed a low energy focused ion beam (FIB) system by employing retarding field optics. The system is equipped with a gas jet and is used for ion beam assisted etching or deposition. To evaluate the usefulness of low energy FIB, we have been investigating defects in GaAs induced by irradia...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 29; no. 10; pp. 2295 - 2298
Main Authors KOSUGI, T, MIMURA, R, AIHARA, R, GAMO, K, NAMBA, S
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.10.1990
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gallium Arsenides
Microelectronic fabrication
Temperature
Ion beam lithography
Experimental study
Online AccessGet full text

Cover

More Information
Summary:We have developed a low energy focused ion beam (FIB) system by employing retarding field optics. The system is equipped with a gas jet and is used for ion beam assisted etching or deposition. To evaluate the usefulness of low energy FIB, we have been investigating defects in GaAs induced by irradiation of low energy Ga + FIB and Ar + unfocused beams. Defets induced by irradiation at 300 K were observed even at a depth of >2000 Å, which is much deeper than the ion range. However, it was observed that the deep distribution was suppressed by irradiation at low temperature (100 K.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.2295