Anisotropic ridge growth by step-flow-mode metalorganic chemical vapor deposition using diethylgalliumchloride

In selective metalorganic chemical vapor deposition, ridge growth of GaAs was investigated with respect to step-flow-mode growth using diethylgalliumchloride. Although the flat surface of selective epilayers was easy to obtain due to the reevaporation-enhancement effect, anisotropic ridged layers we...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 11A; pp. 4885 - 4888
Main Authors YAMAGUCHI, K.-I, OKAMOTO, K
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.11.1993
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Vapor phase epitaxy; growth from vapor phase
Crystal growth
Gallium arsenides
Inorganic compounds
Semiconductor materials
Crystal orientation
Epitaxy
Organometallic compounds
Surfaces
Binary compounds
Experimental study
CVD
Selective growth
Morphology
Masking
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Summary:In selective metalorganic chemical vapor deposition, ridge growth of GaAs was investigated with respect to step-flow-mode growth using diethylgalliumchloride. Although the flat surface of selective epilayers was easy to obtain due to the reevaporation-enhancement effect, anisotropic ridged layers were also observed. The growth form of the ridged layers depended upon crystal orientation of striped mask patterns, off-angle of vicinal (100) substrates and step-flow velocity. Step-flow velocity in the [011] direction was 1.6 times higher than that in the [01?1] direction; as a result, long ridged layers were formed along the [011] direction.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.4885