Study on the Roles of Charge Trapping and Fixed Charge on Subthreshold Characteristics of FeFETs

Charge trapping (CT) and fixed charge (FC) are considered in the model of transient negative capacitance (TNC). The roles of CT and FC on subthreshold characteristics of ferroelectric FET (FeFET) are investigated by experiment and simulation. The simulation results show that both CT and FC can modul...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 68; no. 3; pp. 1304 - 1312
Main Authors Jin, C., Su, C. J., Lee, Y. J., Sung, P. J., Hiramoto, T., Kobayashi, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge trapping (CT)
Computed tomography
Delays
FeFETs
ferroelectric
Ferroelectric materials
Ferroelectricity
FET
fixed charge (FC)
Hysteresis
Logic gates
negative capacitance
Simulation
Switches
Trapping
Voltage measurement
Online AccessGet full text

Cover

More Information
Summary:Charge trapping (CT) and fixed charge (FC) are considered in the model of transient negative capacitance (TNC). The roles of CT and FC on subthreshold characteristics of ferroelectric FET (FeFET) are investigated by experiment and simulation. The simulation results show that both CT and FC can modulate the subthreshold characteristics of FeFET by shifting the operation point dynamically and statically, respectively. In addition, ferroelectric hysteresis can be reduced by the compensation due to CT and minor loop formation due to FC in a certain <inline-formula> <tex-math notation="LaTeX">{V}_{g} </tex-math></inline-formula> sweep range. As a result, sub-60 mV/decade subthreshold swing (SS) with nearly hysteresis-free operation observed in experiments can be qualitatively reproduced by our simulation framework of TNC if both CT and FC are well-considered.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3048916