Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and...

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Bibliographic Details
Published inJournal of lightwave technology Vol. 34; no. 8; pp. 2011 - 2019
Main Authors Sugawara, Kenta, Kawasaki, Tetsuya, Tamamushi, Gen, Mastura, Hussin, Dobroiu, Adrian, Yoshida, Tomohiro, Suemitsu, Tetsuya, Fukidome, Hirokazu, Suemitsu, Maki, Ryzhii, Victor, Iwatsuki, Katsumi, Kuwano, Shigeru, Kani, Jun-Ichi, Terada, Jun, Otsuji, Taiichi
Format Journal Article
LanguageEnglish
Published New York IEEE 15.04.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Frequency conversion
Graphene
Logic gates
millimeter wave photonics
Optical fibers
Photonics
radio access networks
Radio frequency
Wireless communication
Wireless communications
frequency conversion
HEMTs
millimeter wave communication
millimeter wave photonics
InP
FETs
graphene
radio access networks
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Summary:InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2015.2505146