High performance resists tailored for 248 nm chemical amplification of resist lines technology

• Published in: Japanese Journal of Applied Physics Vol. 30; no. 11B; pp. 3108 - 3115
• Main Authors: SEZI, R, BORNDÖRFER, H, LEUSCHNER, R, NÖLSCHER, C, SEBALD, M, AHNE, H, BIRKLE, S
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.11.1991
• Subjects: Applied sciences; Electrical engineering. Electrical power engineering; Electrical machines; Exact sciences and technology; Ion implantation; Experimental study; Lithography; Laser
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.30.3108

Different dry developable resist systems operating in positive bilayer (Si-CARL) and negative top surface imaging (Top-CARL) modes were investigated for application in 248 nm lithography. After exposure with the KrF excimer laser projection aligner (NA=0.37), development, aqueous silylation and oxygen reactive ion etching, 0.25 µm structures were obtained as the ultimate resolution of Si-CARL with a topresist containing diazoketone photoactive compounds. The process latitudes for 0.4 µm and 0.5 µm lines and spaces amount to 25% and 30% for exposure and to 3 µm and 3.2 µm for defocus, respectively. Comparable values were determined for an alternative Si-CARL system with a new acid catalysed topresist. The required doses for zero bias exposure are 65-70 mJ/cm 2 (diazoketone) and 21 mJ/cm 2 (acid catalysed). The Top-CARL resist also utilizes the acid catalysed deprotection chemistry for selective silylation of the exposed areas. The preliminary formulation presented well-shaped 0.35 µm structures at 10 mJ/cm 2 .