Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy

We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the...

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Published inPhysical review letters Vol. 102; no. 14; p. 147401
Main Authors Rauter, P, Fromherz, T, Vinh, N Q, Murdin, B N, Mussler, G, Grützmacher, D, Bauer, G
Format Journal Article
LanguageEnglish
Published United States 10.04.2009
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Summary:We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as the wave functions and their overlaps were tuned. The range of magnitudes for the lifetime indicates a possible route to silicon-based quantum cascade lasers.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.102.147401