Transmission electron microscopy observation of defects induced by Fe contamination on Si(100) surface

• Published in: Japanese Journal of Applied Physics Vol. 30; no. 8; pp. 1591 - 1596
• Main Authors: SADAMITSU, S, SASAKI, A, HOURAI, M, SUMITA, S, FUJINO, N
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.08.1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Non metal; Semiconductor materials; Czochralski method; Precipitate; Crystal defect; Experimental study; Contamination; Surface; Transmission electron microscopy; Oxidation; Silicon; Chemical diffusion; Thermal annealing
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.30.1591

The behavior of Si(100) surface defects induced by Fe contamination was studied with transmission electron microscopy. After annealing at 1150°C for 1 hour and a subsequent heat treatment at 850°C for 2 hours, Fe-containing precipitates were observed in Si substrate in close vicinity to the interface of Si and SiO 2 formed during the annealing. One of these precipitates is identified as FeSi-type silicide. In addition, the inclusions which were confirmed to be Fe 3 O 4 or γ-Fe 2 SiO 4 were observed in the surface thermal SiO 2 layer. These results demonstrate that Fe atoms diffuse into the Si substrate during annealing at 1150°C and precipitate at a Si/SiO 2 interface, while Fe atoms left on the surface form inclusions in the surface SiO 2 layer. Under an additional thermal oxidation at 1000°C, oxidation-induced stacking faults were formed. They were not decorated at all in contrast with those induced by Cu or Ni contamination.