Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process i...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 20; no. 6; pp. 356 - 360
Main Author 刘尧平 英敏菊 梅增霞 李俊强 杜小龙 A．Yu．Kuznetsovc
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2011
Subjects
ZnO薄膜
复合物
外延片
植入
氧化锌
电气测量
锑离子
间隙
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/6/066104

Cover

More Information
Summary:In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 （L） peak in annealed high Sb＋ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sbzn-2Vz,, complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb＋ implanted samples is speculated to result from （Zn interstitials-O interstitials） Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb＋ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.
Bibliography:ZnO, ion implantation, Raman spectra, molecular beam epitaxy
In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 （L） peak in annealed high Sb＋ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sbzn-2Vz,, complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb＋ implanted samples is speculated to result from （Zn interstitials-O interstitials） Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb＋ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.
Liu Yao-Ping, Ying Min-au, Mei Zeng-Xia, Li Jun-Qiang Du Xiao-Long, and A. Yu. Kuznetsov（ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China b） College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China c） Department of Physics, University of Oslo, P. O. Box 1048 Blindern, NO-0316 Oslo, Norway
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/6/066104