Variations in X-ray fluorescence from GaAs and photocurrent in CdS due to standing waves of X-rays

• Published in: Japanese Journal of Applied Physics Vol. 23; no. 12; pp. 1637 - 1639
• Main Authors: ANNAKA, S, TAKAHASHI, T, KUKUTA, S
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.01.1984
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Structure of solids and liquids; crystallography; X-ray diffraction and scattering; Experimental study; X ray diffraction; X ray fluorescence; Inorganic compound; Standing wave
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.23.1637

The intensities of the K-series fluorescence from GaAs and the photocurrent in CdS were measured during the dynamical diffraction of X-rays. Variations in the fluorescence during the 111 and 1̄1̄1̄ reflections and the photocurrent during the 110 reflection are explained by considering X-ray standing-wave fields in crystals. The effect of the standing waves on the fluorescence yield is emphasized when the fluorescence from layers near the surface is measured. The curve of the variation of the photocurrent in CdS is explained by considering the proper absorption coefficient of electrons in the crystal. A principle for the standing waves in the dynamical diffraction of X-rays is also given.