Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories

A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper ex...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 64; no. 8; pp. 2046 - 2053
Main Authors Edmonds, Larry D., Irom, Farokh, Allen, Gregory R.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Circuits
Flash memories
Flash memory (computers)
Heavy ions
Ionizing radiation
Ions
Mathematical models
Nonvolatile memory
Parameter estimation
Propulsion
Protons
Radiation effects
Single Event Effects
Solids
Temperature measurement
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Summary:A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper extends the model to include TID effects in the control circuitry by including one additional parameter. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 14
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2641966