A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

• Published in: IEEE transactions on electron devices Vol. 63; no. 4; pp. 1478 - 1485
• Main Authors: Syamal, Binit, Xing Zhou, Ben Chiah, Siau, Jesudas, Anand M., Arulkumaran, Subramaniam, Geok Ing Ng
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Adaptation models; Compact model (CM); current collapse (CC); drain lag; Electron traps; Gallium nitride; gate lag; HEMTs; high electron-mobility transistors (HEMTs); interface traps; Logic gates; MODFETs; pulsed I-V; drain lag; pulsed I – V; gate lag; interface traps; high electron-mobility transistors (HEMTs); Compact model (CM); current collapse (CC)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2016.2533165

A comprehensive scalable trap-charge model for the dc and pulsed I-V modeling of GaN high electron-mobility transistor is presented. While interface traps are considered for dc I-V modeling, surface states and traps in the AlGaN barrier and GaN buffer are considered for the pulsed I-V model. A surface-potential-based model is presented for interface traps, which is then adapted to the current model for the dc modeling. For the pulsed I-V modeling, a semiempirical approach is proposed for gate lag as well as both gate-lag and drain-lag conditions. The model is able to capture the effects of gate (V gq ) and drain (V dq ) quiescent biases as well as the stress time (T OFF ), and is validated with both numerical simulation and measurement data. Finally, for the accurate transient simulations in switching applications, the emission of electrons is also modeled in Verilog-A using an asymptotic solution of a differential equation, which can be a better alternative to that of the RC subcircuit approach.