Investigation of transient thermal dissipation in thinned LSI for advanced packaging

Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advance...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 4S; pp. 4 - 8
Main Authors Araga, Yuuki, Shimamoto, Haruo, Melamed, Samson, Kikuchi, Katsuya, Aoyagi, Masahiro
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.04.2018
Japanese Journal of Applied Physics
Subjects
Dissipation
Equivalence
Form factors
Packaging
Silicon
Thinning
Online AccessGet full text

Cover

More Information
Summary:Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advanced packages, thermal characteristics of the thinned LSIs must be clarified. In this study, static and dynamic thermal dissipations were analyzed before and after thinning silicon to determine variations of thermal characteristics in thinned LSI. Measurement results revealed that silicon thinning affects dynamic thermal characteristics as well as static one. The transient variations of thermal characteristics of thinned LSI are precisely verified by analysis using an equivalent model based on the thermal network method. The results of analysis suggest that transient thermal characteristics can be easily estimated by employing the equivalent model.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FC06