Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

• Published in: IEEE transactions on electron devices Vol. 64; no. 10; pp. 4295 - 4301
• Main Authors: He Zhang, Wang Kang, Lezhi Wang, Wang, Kang L., Weisheng Zhao
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2017; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CMOS; Critical current density (superconductivity); Data storage; Feasibility; In-memory logic (IML); Logic; Logic functions; Magnetic effects; Magnetic switching; magnetic tunnel junction (MTJ); Magnetic tunneling; Magnetization; Product development; R&D; Research & development; Resistance; spin Hall effect (SHE); Spintronics; Switches; voltage-controlled magnetic anisotropy (VCMA)

Stateful in-memory logic (IML) is a promising paradigm to realize the unity of data storage and processing in the same die, exhibiting great feasibility to break the bottleneck of the conventional von Neumann architecture. On the roadmap toward developing such a logic platform, a critical step is th...