Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

The dependence of transistor characteristics on grain boundary （GB） position in short-channel ZnO thin film transistors （TFTs） has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It...

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Bibliographic Details
Published inChinese physics B Vol. 20; no. 5; pp. 347 - 352
Main Author 张安 赵小如 段利兵 刘金铭 赵建林
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2011
Subjects
二维数值模拟
位置
数值研究
晶体管特性
晶界
氧化锌薄膜
薄膜晶体管
薄膜电晶体
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Summary:The dependence of transistor characteristics on grain boundary （GB） position in short-channel ZnO thin film transistors （TFTs） has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si （poly-Si） TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with CB position.
Bibliography:Zhang An,Zhao Xiao-Ru,Duan Li-Bing Liu Jin-Ming,Zhao Jian-Lin Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science, Northwestern Polytechnical University, Xi＇an 710072, China
grain boundary, ZnO thin film transistors, trap states, simulation
11-5639/O4
The dependence of transistor characteristics on grain boundary （GB） position in short-channel ZnO thin film transistors （TFTs） has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si （poly-Si） TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with CB position.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/5/057201