Poly-SiGe-Based MEMS Thin-Film Encapsulation

This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm 2 and different sealed-in pressures ( ~ 100 kPa and ~ 2 kPa) a...

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Published inJournal of microelectromechanical systems Vol. 21; no. 1; pp. 110 - 120
Main Authors Bin Guo, Bo Wang, Lianggong Wen, Helin, P., Claes, G., De Coster, J., Du Bois, Bert, Verbist, A., Van Hoof, R., Vereecke, G., Haspeslagh, L., Tilmans, H. A. C., Decoutere, S., Osman, H., Puers, R., De Wolf, I., Tanaka, S., Severi, S., Witvrouw, A.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.02.2012
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm 2 and different sealed-in pressures ( ~ 100 kPa and ~ 2 kPa) are demonstrated. The use of a porous cover on top of the release holes avoids deposition inside the cavity during sealing, but leads to a sealed-in pressure of approximately 100 kPa, i.e. atmospheric pressure. Vacuum ( ~ 2 kPa) sealing has been achieved by direct deposition of a sealing material on the SiGe capping layer. Packaged functional accelerometers sealed at around 100 kPa have an equivalent performance in measuring accelerations of about 1 g compared to a piezoelectric commercial reference device. Vacuum-sealed beam resonators survive a 1000 h 85°C/85%RH highly accelerated storage test and 1000 thermal cycles between -40°C and 150°C.
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ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2011.2170823