Poly-SiGe-Based MEMS Thin-Film Encapsulation
This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm 2 and different sealed-in pressures ( ~ 100 kPa and ~ 2 kPa) a...
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Published in | Journal of microelectromechanical systems Vol. 21; no. 1; pp. 110 - 120 |
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Main Authors | , , , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.02.2012
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm 2 and different sealed-in pressures ( ~ 100 kPa and ~ 2 kPa) are demonstrated. The use of a porous cover on top of the release holes avoids deposition inside the cavity during sealing, but leads to a sealed-in pressure of approximately 100 kPa, i.e. atmospheric pressure. Vacuum ( ~ 2 kPa) sealing has been achieved by direct deposition of a sealing material on the SiGe capping layer. Packaged functional accelerometers sealed at around 100 kPa have an equivalent performance in measuring accelerations of about 1 g compared to a piezoelectric commercial reference device. Vacuum-sealed beam resonators survive a 1000 h 85°C/85%RH highly accelerated storage test and 1000 thermal cycles between -40°C and 150°C. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1057-7157 1941-0158 |
DOI: | 10.1109/JMEMS.2011.2170823 |