Pr:YAlO3 microchip laser at 662 nm

• Published in: Laser physics letters Vol. 8; no. 2; pp. 116 - 119
• Main Authors: Fibrich, M., Jelínková, H., Šulc, J., Nejezchleb, K., Škoda, V.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.02.2011; WILEY‐VCH Verlag; Wiley
• Subjects: diode pumping; Diode-pumped lasers; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Laser materials; Lasers; microchip laser; Optical materials; Optics; Physics; Pr:YAP; Semiconductor lasers; laser diodes; Gallium Nitrides; Output power; microchip laser; Ternary compounds; Binary compounds; Laser materials; Laser diodes; Semiconductor lasers; Pr:YAP; Optical materials; Diode pumping; Cavity resonators; III-V semiconductors
• ISSN: 1612-2011; 1612-202X
• DOI: 10.1002/lapl.201010108

A continuous‐wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at ∼448 nm was used as a pumping source. Output characteristics were investigated at different active medium temperature within the range of 11–35°C. The best result 27.4 mW of output power has been reached at 11°C at 680 mW of pumping power. The slope efficiency related to the incident pumping power was ∼9%. (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA) (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)